Formation of graphene atop a Si adlayer on the C-face of SiC

the effect of consciousness raising (c-r) on the reduction of translational errors: a case study

در دوره های آموزش ترجمه استادان بیشتر سعی دارند دانشجویان را با انواع متون آشنا سازند، درحالی که کمتر به خطاهای مکرر آنان در متن ترجمه شده می پردازند. اهمیت تحقیق حاضر مبنی بر ارتکاب مکرر خطاهای ترجمانی حتی بعد از گذراندن دوره های تخصصی ترجمه از سوی دانشجویان است. هدف از آن تاکید بر خطاهای رایج میان دانشجویان مترجمی و کاهش این خطاها با افزایش آگاهی و هوشیاری دانشجویان از بروز آنها است.از آنجا ک...

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods

The properties of epitaxial graphene on the C-face of SiC are investigated using comprehensive structural, chemical and electrical analyses. By matching similar nanoscale features on the surface potential and Raman spectroscopy maps, individual domains have been assigned to graphene patches of 1-5 monolayers thick, as well as bare SiC substrate. Furthermore, these studies revealed that the grow...

Stacking of adjacent graphene layers grown on C-face SiC

Controllable growth of vertically aligned graphene on C-face SiC

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as...